DTA114YM3T5G: Features, Specs & More
smbomelectronics
2025-12-31 07:46
DTA114YM3T5G: Features, Specs & More

The onsemi DTA114YM3T5G is a compact, high-performance PNP bipolar junction transistor (BJT) designed for low-power and high-reliability electronic applications. It offers a combination of excellent gain, low saturation voltage, and wide operating temperature, making it ideal for surface-mount designs. In this comprehensive article, we'll delve into the intricacies of the DTA114YM3T5G, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.

DTA114YM3T5G's Overview

The DTA114YM3T5G is a PNP transistor that belongs to the category of digital transistors with integrated resistors. It is engineered to provide efficient switching and amplification in low-voltage electronic circuits. Manufactured by onsemi, this transistor ensures reliable operation across a wide temperature range, from -55°C to 150°C. Its compact SOT-723 package makes it suitable for automated assembly using tape and reel packaging.

Key Features

Let's delve into the standout features that make the DTA114YM3T5G a standout in the world of electronics:

· The DTA114YM3T5G supports a maximum collector-emitter voltage of 50V.

· It can handle a continuous DC collector current of up to 0.1A.

· The transistor delivers a minimum DC current gain of 80 at 5mA and 10V.

· It includes a typical input resistor of 10 kΩ.

· The device offers a typical resistor ratio of 0.21.

· It has a maximum collector-emitter saturation voltage of 0.25V at 0.3mA–10mA.

· The maximum power dissipation is rated at 600 mW.

· It operates reliably from -55°C to 150°C, supporting extreme temperature conditions.

· The transistor comes in a tape-and-reel package for automated assembly.

· It features a flat lead shape with three pins for easy surface mounting.

· Its small dimensions are 1.2 mm length, 0.8 mm width, and 0.5 mm height.

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