In today's advanced automotive electronics, power efficiency and durability are paramount. The Infineon FS800R07A2E3B31BOSA1 stands out as a robust Insulated Gate Bipolar Transistor (IGBT) module engineered to meet stringent automotive standards. In this comprehensive article, we'll delve into the intricacies of the FS800R07A2E3B31BOSA1, uncovering its definition, key features, specifications, applications, and a closer look at its manufacturer.

FS800R07A2E3B31BOSA1's Overview

The FS800R07A2E3B31BOSA1 is an advanced N-channel IGBT module from Infineon Technologies. It features a hybrid 33-pin configuration, optimized for automotive-grade performance. Built on Field Stop and Trench technology, this device offers excellent switching characteristics and power handling. It is compliant with the automotive standard AEC-Q101, ensuring its reliability under harsh conditions.

Key Features

Let's delve into the standout features that make the FS800R07A2E3B31BOSA1 a standout in the world of electronics:

· The module supports a maximum collector-emitter voltage of 650V.

· It provides a continuous collector current rating of up to 700A.

· Typical collector-emitter saturation voltage is approximately 1.3V, indicating efficient conduction.

· Maximum power dissipation capacity reaches 1550 milliwatts.

· The gate-emitter voltage withstands up to ±20V.

· Operating temperature range spans from -40°C to 150°C.

· It features a 33-pin HYBRID2-1 package with a screw mounting design.

· The compact package dimensions are 216mm in length, 100mm in width, and 28.5mm in height.

· Maximum gate emitter leakage current is extremely low, rated at 0.4 microamps.

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